Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s.
نویسندگان
چکیده
Linear and hyperbranched poly(azomethine)s (PAMs)-based on triphenylamine moieties are synthesized and used as the functioning layers in the Ta/PAM/Pt resistive switching memory devices. Comparably, the hyperbranched PAM with isotropic architecture and semi-crystalline nature shows enhanced memory behaviors with more uniform distribution of the HRS and LRS resistances.
منابع مشابه
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ورودعنوان ژورنال:
- Chemical communications
دوره 50 78 شماره
صفحات -
تاریخ انتشار 2014